| In recent years, Micro electronic mechanical system (MEMS) has been applied in more and more fields with the development of the science and technology. But as one of the packaging technology, anodic bonding of silicon-glass has many deficiencies. Pyrex glass and SD-2 glass are used as anodic bonding materials which are packaged with silicon, they not only have slow velocity of etch, but also have improper coefficient of thermal expansion(CTE) with silicon on different temperature and great residual stress which have bring difficulty to packaging technology. Compared with them, glass-ceramic has a lot of advantages such as high mechanical strength and rigidity, good chemical and thermal stability, good insulation, small dielectric loss, steady dielectric constant and so on. So glass-ceramic was chose to replace traditional glass to bond with silicon at the temperature under 35℃.In this paper, Li2O-Al2O3-SiO2(LAS) system glass-ceramic was chose to as anodic bonding material which was matched to silicon. The basic glass was prepared by adopting conventional melt quenching technology and the temperature of nucleation and crystallization were determined by using DTA. And then the basic glass was heated according to different heat-treatment schedule. The main crystal phase and microstructure were researched by XRD and SEM. The effect of heat-treatment schedule on performance of CTE, mechanical strength, resistivity and dielectric constant had been studied. The experimental of anodic bonding was done at the temperature range from 200℃to 400℃, voltage from 400V to 600V. The effect of technical parameter of voltage, temperature and time on bonding performance was discussed. And the mechanism of anodic bonding of glass-ceramic and silicon was studied by analyzing the microstructure of bonding surface and interface. The results have been got as follows:1. With the increase time of crystallization and nucleation, the main crystal phases of the glass-ceramics wereβ-spodumenes. The CTE and resistivity of glass-ceramic increased, mechanical strength increased first and then decreased, dielectric constant and dielectric loss decreased.2. When the heat-treatment schedule was 670℃/3h,980℃/3h, the glass-ceramic of CTE 31.16×10-7/℃(200～400℃), mechanical strength 186.64MPa, resistivity 1.02×1012Ω·m(20℃), dielectric constant 21.5(20℃) which is matched silicon to anodic bonding.3. The anodic bonding experimental results showed that the bonding strength had increased when temperature and voltage were increased, and the time had little influence on bonding strength. The anodic bonding could not realize at the voltage of 500V when the temperature was under 200℃. The bonding strength increased to the most at 10.25 MPa at the temperature of 400℃, voltage of 500V.The project was supported by the National Natural Science Foundation of China (50472039) and the Hubei Provincial Natural Science Foundation of China (2005ABA011).
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