With the increasing complexity of Micro electronic mechanical system (MEMS) devices, the packaging of MEMS became a complicate work, anodic bonding of glass-ceramics has been used commonly in MEMS for its simple process and high bonding strength, However, new electronic component demands lower temperature and voltage, traditional anodic bonding should be improved. By using the glass-ceramics instead of traditional bonding glass, the bonding process can be achieved in lower temperature and voltage, and anodic bonding adapt to new desire. While the bonding mechanism between glass-ceramics and silicon is not clear, in this paper, glass-ceramics were used as bonding material, and the mechanism of silicon/glass-ceramics anodic bonding was discussed.Li2O-Al2O3-SiO2 (LAS) glass-ceramic was choose as anodic bonding material. The glass-ceramics was prepared by traditional melt quenching technology and the temperature of nucleation and crystallization were determined by DTA, The effect of heat-treatment schedule on performance of CTE, mechanical strength, resistivity had been studied. The bonding strength under different parameters were also measured by tensile testing equipment, the relationship between bonding strength and content of main crystal phase was discussed, crystal binding energy was also calculate, which could explain crystal's role in the bonding, black spot and bonding layer formed in the process were analyzed by XRD, EDS, SEM, etc. the results were got as follows:1. With the increasing of nucleation time and crystallization time, crystalline phase content increased, LAS s glass of the main phase wasβ-spodumene, the mechanical strength and resistivity of glass-ceramics increased, and the thermal expansion coefficient of the glass-ceramic was about 31-34×10-7/℃(200~400℃).2. Content of crystalline phase increase, in the same bonding parameters, bonding strength increased and then decreased, content of crystalline phase decrease, thermal expansion coefficient become smaller, which can't match well with silicon, leading to higher bond stress; while excessive crystal phase makes bonding experiments difficult to carry out.3. Oxygen ions of the main crystal phase is in stable, the lattice energy can be as high as 8302,7 kcal/mole, bonding process is difficult to destroy the lattice, oxygen combined with silicon mainly from non-bridge oxygen of the residual glass phase, crystalline is almost not involved in bonding.4.Black spots generated in the process is mainly affected by bonding voltage, temperature had little effect, SEM tests show black spots have structural defects or less crystalline phase, the formation of black spots mainly due to the strong electric field.5. O2+, Al3+, Si4+were observed in the joint layer by EDS, it is assumed that the reaction between the non-bridge oxygen of glass-ceramics and silicon promoted the formation of the joint layer; from XRD result was found that the joint layer formed during the boding process was amorphous material.6. The mechanism of silicon/glass-ceramics of anodic bonding is the electrochemical reaction, the oxygen of glass phase depletion migrate to the interface with silicon irreversible oxidation, intermediate layer mainly Si-O-Al network form of amorphous material. |