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First-Principles Study Of SnO2 Material And Preparation Of SnO2 Thin Film

Posted on:2009-07-19Degree:MasterType:Thesis
Country:ChinaCandidate:X J LiFull Text:PDF
GTID:2121360248950261Subject:Materials science
Abstract/Summary:PDF Full Text Request
SnO2, which is the most extensive application of gas-sensitive material, can be used to detect all kinds of flammable, explosive and dangerous gas. In this paper, the structure and characteristic of SnO2 were studied from theoretical and experimental aspects.SnO2 bulk structure, oxygen vacancy, Pd-doped and SnO2 (110) surface adsorbing CO were analyzed by first-principles that are based on density functional theory. The results showed that SnO2 was a kind of bandgap semiconductor, Sn, O must exist covalent effect; When oxygen vacancies and Pd doping concentration in SnO2 bulk increased, conduction band width gradually increased, the band-gap width decreased gradually, optical absorption band appeared blue shift. Nine kinds of configuration were calculated by CO adsorbing on SnO2 stoichiometric (110) and reducing (110), it obtained two types of stable structure respectively, and by further analysising it showed that: SnO2 material's conductivity after CO adsorbing on SnO2 (110), the models of CO adsorbing on SnO2 stoichiometric (110) surface were more stable than CO adsorbing on SnO2 reducing (110) surface and the model that CO adsorbed by horizontal approach between Sn (5) and O (2) on the stoichiometric (110) surface was the most stable configuration in all of the models.Through adjusting the substrate temperature, sputtering pressure and the ratio of argon to oxygen, SnO2 thin film which had different component and micro-structure were prepared by magnetron sputtering. The results showed that: the higher the temperature of the substrate, the better of film crystallization degree; the lower the pressure in the chamber, the easier amorphous films formed and the optimum ratio of argon to oxygen is 4:1.SnO2 thin film samples were analyzed under different anneal temperatureby XRD and TEM, the results showed that the film crystallze at 300°C, the grain size was 8 nm, and the film's degree of crystallization and the film grain size inc- reased with increasing annealing temperature. When the temperature was 600°C, the sample had become crystal entirely and the grain size was 24 nm. The samples annealed at 500°C for different times were studied; it was found that, the degree of crystalline thin films and grain size increased with increasing annealing time.According to SnO2 material working condition, some single sensor and multi-sensor structure were designed to meet sensitivity of testing condition.
Keywords/Search Tags:SnO2 thin film, first-principles, magnetron sputtering
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