Preparation Of Zinc Oxide Ceramic Target

ZnO(Zinc Oxide)is an II-VI group direct-gap semiconductor compound with wurtzite structure. The crystal type is a hexagonal structure. It has a wide direct band of 3.37 eV at room temperature. Owing to high stability in hydrogen plasma, abundant raw materials without toxicity and high electrical conductivity and optical transparency, ZnO as transparent conductive oxide has competitive power.In this paper, ZnO powder and Al₂O₃ powder as the main raw materials fabric-cated ZnO ceramic targets which prepare transparent conductive films by sintering in atmospheric pressure.Conductivity, physical and micrographs of ZnO ceramic targets were investigated in the powder molding pressures, different Al₂O₃ doping, different Al doping and sintering process. The research work was listed below.Firstly, When molding pressure was 3MP, Conductivity of the ceramic target was best.Secondly, When the proportion of Al:Zn atom was 4.0:100, resistivity of ZnO was the lowest, 4.1×10^-3Ω·㎝. When Al doping exceeded some boundary, Al was not substitutional ion. Al integrated Zn and O atom and generated ZnAl₂O₄ that leaded to increasing resistivity of ZnO ceramic target.Thirdly, When the sintering temperature was 1350℃, the surface of target was sound. From the fracture surface, the stomas were few and existed in the boundaries. It reached the sintering end point.Fourthly, When Al powder was doped, grains were biggest at the 1050℃. At the same time the resistivity was the lowest at the 1050℃.