Preparation And Characterization Of ZnSe Thin Films By Electrodeposition

ZnSe crystal is a direct band gapâ…¡-â…£Semiconductors, ZnSe have a wide range of applications in the Blu-ray diode laser devices, thermal non-linear optical devices, infrared devices, as well as thin film solar cells, and so on。The mathods of MOCVD and MBE preparing ZnSe films have been more mature process, but both methods require expensive equipment and high operating costs, it is not conducive to ZnSe films prepared to promote technology and development。In this paper, the Pure, cubic ZnSe films were prepared with the method of Potentiostatic deposition on a transparent ITO conductive glass substrate from electrolytes containing ZnCl₂ and SeO₂。The effect of the current density, temperature deposition, Concentration ratio of n(Zn²⁺)/n(SeO₃^2-), deposition time on the ZnSe film was studied。Determined the optimum conditions of the preparation of ZnSe films by orthogonal experiments: the PH value of the electrolyte is 6, the current density of electrolyte is 3mA.cm^-2, the temperature of the electrolyte is 65℃, the n(Zn²⁺/n (SeO₃^2-) ratio of the electrolyte is 250: 1, deposition time is 10mins。The surface and cross-section pattern and transmittance of ZnSe films were characterized by SEM and UV-VIS。...