The Principle And Technology Of Monocrystall Silicon Growth With Czochralski Methord

With the development and utilization of new energy, it's known that solar cells is the best choice in the future for its cleanliness and security characters. Among them, single-crystal silicon solar has been studied extensively for its unique properties.In this thesis, the growth mechanism, development of research and growth technics of CZ method were analysed including equipment assemblage, impurity of doping,growth parameters, environmental parameters, temperature field structure and crystal growth. And the melt flow influences the heat transmission , distributing of oxygen impurity. This is important to improve the quality of crystal. Compared with the analysis of value simulation and data, we find the best rotate of crystal and crucible, then the growth technics of CZ method of 6-inch single-crystal silicon were improved.