Electrodeposition Of Zn/ZnSe Nano-ordered Structure And Photoelectric Properties

Quasi-one-dimensional nanostructure materials turn into researchful subject due to their novelty property and application in different fields. Especially disparate material systems (such as metal/semiconductor, magnet semiconductor or metal/magnet systems) which was come into being joined together with different materials have attracted considerable attention in recent years. Metal-semiconductor nanostructures are important materials that lead to the development of hetero-structure devices . Zinc is the periodicⅡB group elements, atomic number is 30, atomic weight is 65.38, price electron shell structure is 3d104s2, valence is +2 . ZnSe as an important direct wide-band(2. 68eV)groupsⅡ-VI semiconductor material, the exciton binding energy 21meV, electron and hole mobility respectively 1×10-2 and 1.6×10-3m2 / (V ? s), is an n-type semiconductor material . It has high light-emitting efficiency and high absorption coefficient. It was an potential optical material as a short-wave blue laser and optical equipment because of his light leap forward in high probability in absorbing and emitting, leading to ZnSe and its low-dimensional structures have attracted the attention of researchers.In this paper, Zn/ZnSe quasi-one-dimensional hetero-structure material was prepared by quasi-two-dimensional pulsed electro-deposition method, the morphology of Zn/ZnSe quasi-one-dimensional structure material is characterized , the composition and structure of Zn/ZnSe quasi-one-dimensional structure material are analyzed . The paper explained growth mechanism of quasi-one-dimensional hetero-structure materials by quasi-two-dimensional electro-deposition,the internal reason leading to periodic morphology were analyzed. We explained detailedly at every stage of the formation mechanism of the quasi-one-dimensional structure materials. The article also explained regular branching of quasi-one-dimensional structure materials, putting forward the internal structure of nanostructure materials and the charge distribution on the growth front were important reasons of branching, the rules quasi-one-dimensional branching occurred in the potential of structure materials from low to high were explained .Meanwhile ,we analyzed the inherent reasons of parallel growth of the quasi-one-dimensional hetero-structure material , the reason coming forth various other morphology in deposition process also were analyzed. In addition, the experimental proved the aspect ratio of quasi-one-dimensional hetero-structure material can be adjusted by changing the duration time of applied potential.At room temperature, photoluminescence spectra of Zn/ZnSe structure material was measured using of fluorescence spectrometer, the peak near 461.2nm is ZnSe band emission peak , duing to the combining donor acceptor pairs. The Zn / ZnSe quasi-one-dimensional structure material connected into the circuit, at room temperature high vacuum conditions , different concentration and different scan range, electrical properties of Zn / ZnSe structure materials were measured and obtained I-V curves of the samples , the curve display non-linear , we explain the reason .