Preparation And Properties Of Chalcogenide Composite Films

Metal chalcogenide (such as selenide, sulfide and telluride) nano-materials have special photoelectric properties, and wide potential applications in solar cell and others. The efficiency of photo-electric transformation would be heightened by complexing metal chalcogenide with TiO2, which is a hot field in photoelectric materials.In this paper, the porous TiO2 thin film was first prepared by adding PEG in the TiO2 sol. Then, the composite films were constructed by depositing Ag2Se, PbSe and SnS on the surface TiO2 thin film. The films as-abtained were characterized by Scanning Electron Microscope (SEM), X-ray Diffraction (XRD), Ultraviolet-visible Spectrophotometer (UV-vis). The formation mechanism and the influence factors for the films were exploited. With the xenon lamp light as source, the photoelectric conversion performance of the films was examined.Main work as follows:1. The preparation and photoelectric performance of Ag2Se/TiO2 interface composite filmFirst, the porous TiO2 film was prepared with conduct glass plate by dipping-lifting process in the sol mixing PEG. Then, the Ag2Se/TiO2 composite film was made through the interfacial reaction of Ag2Se. The films as-obtained were characterized by SEM, XRD, and UV-vis. The photoelectric conversion performance of the films was examined by electeochemical workstation with xenon lamp light source. The effect of the amount of the PEG in the sol on the photoelectric conversion was studied. The results show that the photoelectric conversion efficiency of the Ag2Se/TiO2 composite film is higher than that of the pure TiO2 film. The largest photocurrent was obtained by the Ag2Se/TiO2 composite film prepared with the amount of the 10% PEG in the sol. 2. The preparation and photoelectric performance of PbSe/BaTiO3/ TiO2 interface composite filmFirst, the TiO2 film on the conduct glass plate was prepared by dipping-lifting process with sol-gel solution. Then, the BaTiO3 was deposited on the surface of the TiO2 film by sol-gel method. Finally, the PbSe/BaTiO3/TiO2 composite film was prepared by the interfacial reaction of PbSe. The films as-obtained were characterized by SEM, XRD and UV-vis. The photoelectric conversion performance of the films was examined by electeochemical workstation with xenon lamp light source. The results show that the large photocurrent can be obtained with the PbSe/ BaTiO3/TiO2 composite film since the useless recombination of the hole and electron was decreased in the presence of BaTiO3.3. The preparation and photoelectric performance of SnS/TiO2 interface composite filmFirst, the TiO2 film on the conduct glass plate was prepared by dipping-lifting process with sol-gel solution. Then, the SnS/TiO2 composite film was made by depositing SnS on the surface of the TiO2 film at room temperature. The films as-obtained were characterized by SEM, XRD and UV-vis. Using the xenon lamp light as source, the photoelectric conversion performance of the films were examined by electeochemical workstation. The results show that the large photocurrent and open circuit voltage can be obtained with the SnS/TiO2 composite film, since the SnS has strong absorption in visible light district, which broadens the scope of its optical response.