Synthesis And Properties Of Some Metal And Metal Oxide Films By Magnetron Sputtering

Metal and metal oxide have important applications in gas-sensing, photocatalyst and photovoltaics, etc. The metal oxide film prepared by magnetron sputtering technique possesses good qualities, such as high purity, good compactness, controllability and excellent adhesion. Therefore magnetron sputtering technique is widely used to prepare large area and high quality films in industrial production. In our work, CuO nanowires (NWs) array films were synthesized by magnetron sputtering. Their gas-sensing properties were also investigated. Except this, WO₃/ TiO₂ nanocomposite films were synthesized by magnetron sputtering and their dynamic charge transport properties were investigated by the transient photovoltage technique. The paper mainly includes three parts such as follows:(1)The metal copper films were deposited by magnetron sputtering on fluorine-doped tin oxide ( FTO ) coated glass. The CuO nanowires array film can be obtained through the subsequently heat oxidation process. The morphology and microstructure of the copper film and the CuO nanowires film were characterized by X-ray diffraction ( XRD ), scanning electron microscopy ( SEM ) and high-resolution transmission electron microscopy ( HRTEM ), respectively. The CO and H2S sensing characteristics of the CuO nanowires array film was also investigated. Our results showed that CuO nanowires array film exhibited the highest CO gas response at 250℃. The response can be significantly enhanced when the CO gas concentration increased. There is a sensing response at low gas concentration for H2S at room temperature. While for the higher temperature, the resistance of the CuO nanowires array film decreased rapidly, which is different from the CO gas. The abnormal resistance change for the H2S was also illustrated.(2)The dynamic photo-induced charge transport properties of pulse magnet sputtering produced TiO₂, WO₃ and WO₃/TiO₂ films were directly observed using the time-dependent transient photovoltage (TPV) technique. For composite WO₃/TiO₂ hetero-junction thin film, a TPV polarity change, which is about three orders larger than that of the TiO₂ and WO₃ was observed. The TPV polarity change indicates the WO₃ and TiO₂ interface plays a most significant role for the charge separation. The charge separation mechanism and transport process between the WO₃ and TiO₂ interface is also discussed and illustrated. (3)In order to explore the technology and preparation conditions of ultra thin metal film, Cu thin film was synthesized by magnetron sputtering through controlling the deposition time. Our results showed that the Cu ultra thin film could not formed after 10 seconds deposition. The perfect and dense ultra thin film could be obtained after 30 seconds. The particles diameter increased with the larger sputtering voltage. The impacts of current, gas pressure and substrate-to-target distance to the film quality were also investigated. Cu oxide and Zn oxide thin films can be prepared directly through the subsequently heat oxidation process.