Research Of Film Uniformity On Small Circular Plane Target By Magnetron Sputtering

The magnetron sputtering coating technology is one of the most mainest technologies. Film thickness uniformity is one of the most important indexes of film quality and coater's performance. To obtain good thickness uniformity of film, lots of magnetron sputtering coaters usually use targets which are larger than substrates. Though using this method we can get films which have good thickness uniformity, it can lead to waste of targets, and improve cost. This situation is much more obvious. So researches in this field will have important academic and practical values.Base on the principle of circular plane magnetron sputtering, according to the small target we use in this thesis we designed a mechanical structure by which substrates can achieve compound motion which has not only revolution but also rotation. Using this structure we can obtain good thickness uniformity film on a larger substrate. According to the correlation theories of magnetron sputtering, the circular plane target is analysis. We established mathematical model of film thickness uniformity, simulated and calculated using computer.According to the calculation and analysis, we can get results as follows:When the substrates rotation off-axis, film distribution is affected by both target-substrate distance and eccentricity. In a certain range, as the increase of target-substrate distance, film thickness becomes thinner and film thickness uniformity becomes better. As the increase of eccentricity, film thickness uniformity becomes better first and then becomes worse. Meanwhile, the size of etching area of the target affects film thickness uniformity. As the increase of etching area, film thickness increases significantly, that is to say, the deposition rate increased. But the effects to film thickness uniformity by etching area are not obvious. When the substrates rotation and revolution simultaneous, film thickness uniformity is affected obviously by target-substrate distance, eccentricity, and speed ratio. In a certain range, as the increase of target-substrate distance, film thickness becomes thinner and film thickness uniformity becomes better. As the increase of eccentricity, film thickness uniformity becomes better first and then becomes worse. When the speed ratio increases, film thickness uniformity becomes better. And film thickness uniformity changes less evident as this ratio increases to some extent. As the increase of etching area, film thickness increases significantly. But the effects to film thickness uniformity by etching area are not obvious.By designing the mechanical structure of substrate rotation and revolution, and calculating the film thickness uniformity of the small circular plane magnetron sputtering system, it is proved that using this small target and mechanical structure we designed, film with good thickness uniformity can be obtained. This paper provides theoretical basis to the application of the small circular plane magnetron sputtering system.