The Study On Gaas Photoconductor Detector By Proton Irradiation

GaAs has got abroad application in the field of photoelecticity and nucleus microwave parts of apparatus because of its characteristics of fast electron transfer big breadth of ban-strip and the direct transition energy-strip configuration. As a sub-nanosecond and pulse radiation detector, GaAs photoconductor detector has a very wide application foreground. This kind of detector has many merits as follow: fast response time, large output current, fine linear response, high sensitivity to many particles including neutron, charged particle, X-ray, gamma-ray, visible light, and being able to work at room temperature. This kind of detector can be applied to a lot of fields, such as in high-speed photoelectronic switch, ICF device, and synchrotron radiation. For this reason, it has great significance to research this kind of detector.Undoped GaAs Liquid Encapsulated Czochralski (LEC) semiconductor as photoconductor detector materiel is used and GaAs photoconductor detector with double microstrip structure is developed. A set of techniques of making GaAs detector is found during experiments. In order to improve property of the detector, the detector is irradiated by proton and electron. After measuring dark current, photocurrent .. sensitivity and response to X pulse of GaAs detector before and after proton and electron radiation, the response time, fall time of trailing edge, full width of half maximum (FWHM), sensitivity, carrier life, mobility are researched and contrasted. The result shows that the performance of detector which is irradiated by double beams of proton is superior to the detector irradiated by electron or singlebeam of proton. The response speed of detector and nonlinear of back edge of output signal have been improved greatly after double beams of proton radiation. In addition, owing to the vice and the vice group which is inducted by proton scattering part of the X-ray, sensitivity of the detector reduces, and 'the phenomenon of saturation' has been abated in some degree.At present, this kind of GaAs photoconductor detector has had practical value. It can detect X-ray, gamma-ray, laser pulse successfully at the room temperature.