| GaAs photo-conductor detector is a new type of sub-nanosecond and pulse radiation detector that has been developed in recent years. This kind of detector has many merits as follows: fast response time, large output current, fine linear response, high sensitivity to many particles including neutron, charged particle, X-ray, gamma-ray, visible light, and being able to work at indoor temperature. This kind of detector can be applied to lots of field in high-speed photoelectronic swith, ICF device. For this reason, it has great significance to research this kind of detector.Undoped GaAs semiconductor as photoconductor detector materiel is used and GaAs photoconductor detector with double microstrip structure is developed. A set of techniques of making GaAs detector is found during experiments. In order to improve property of the detector, the detector is irradiated by electron. After measuring dark current, photocurrent and response to X pulse of GaAs detector before and after 1.7 MeV electronic radiation, the response tune, fall time of trailing edge, full width of half maximum (FWHM), sensitivity, carrier life, mobility are researched and contrasted. The result shows that the response speed of detector, time resolution ratio and nonlinear of back edge of output signal have been improved greatly after electronic radiation. Though sensitivity of the detector reduces, its measuring range can be widened.At present, this kind of GaAs photoconductor detector has had practical value. It can detect X-ray, gamma-ray, laser pulse successfully. Our research work lays a good foundation on development of GaAs semiconductor and has great significance to the development of semiconductor detector in our country.
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