The Study On The Structure And Optoelectrical Properties Of ITO Film By Magnetron Sputtering

Transparent conductive oxide (TCO) films with transparent and conductive characteristics have been widely used in solar battery electrodes, graphic LCD, and other energy-saving window. At the present time, transparent conductive thin film can be prepared by many kinds of technology, including magnetron sputtering, chemical vapor deposition, vacuum evaporation, thermal decomposition, and Sol-Gel process. It developed rapidly in recent years. With the display technology developed toward flexible, thin-oriented, the research of flexible TCO films is undertaken accordingly. One of the most important researches is to deposit ITO thin films with lower resistivity for analogous visible transmittance on organic substrates at room temperature.Hyaloid ITO conducting thin film was prepared by magnetron sputtering process. The source material is ITO and the weight ratio of In2O3 and SnO2 was 90%:10%. The preparation process and properties of ITO thin film was explored. Indium-tin-oxide (ITO) films are prepared by direct current (DC) magnetron sputtering. After deposition, the films are annealed in air for 1.5h at different temperature (100℃-400℃). The crystal structure and surface shape of the film are analyzed by XRD, SEM and AFM. The light transmittance and resistance are measured by WGD-3 and ZS-82. Study splash power to the thin film deeply the influence of the light rate. The result manifest that the resistance declines along with the increment of the splash power, the light transmittance is obviously improved after annealing, to the purple light district of the 360nm-380nm, the light transmittance attains lowest. To the red light district of the 760nm-800nm, the light transmittance attains highest.