| The CuInS2 absorder layer and CdS buff layer, forming P-N junction, is the CuInS2 thin film solar cell critical materials. The DC reactive sputtering and chemical bath deposition were adopted to prepare CuInS2 and CdS thin film on glass. Conclusion was obtained through expression and analysis, as follow:1. CuInS2 thin film was prepared by DC reactive sputtering with copper target, indium target and pure H2S gas. The internal relations of CuInS2 composition, morphology, structure, optical and electrical properties were revealed. It has been found experimentally that the ratio of copper and indium target sputtering power determines the thin film composition. Increasing substrate temperature leads to the In-rich phase content decrease and crystal quality improvement, which hace no obvious. Increasing work pressure leads to the carrier concentration and mobility decrease, and resistivity increase. NaCN solution could effectively remove the impurity Cu-S phase.2. CBD is used to fabricate CuInS2 thin film. The thin film thickness increase as deposition tempreture, chromium and thiourea concentration increase. Increase deposition could lead to transition of the CdS phase between the cubic and hexagonal structure. All CdS thin films are N type with 1012-1013cm-3 carrier concentration. As deposition tempreture and chromium concerntration increase, the resistively decrease, with no obvious effect by ph and thiourea concentration.
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