Preparation And Study Of Chip Fuse Basis Material And Co-Fired With Fuse Unit

Alone with the emergence of high high-density, high speed and high reliability microelectronic products, as the protection element of electron device, traditional device could not meet market needs due to large volume, easily broken, not be able to installation automatically and other shortages. Hence this impels circuit protection device to miniaturization, high reliability and high-precision. Accordingly, chip ceramic fuse become the inevitable trend. The key technologies are: on the one hand, substrate material not only could sintered in low temperature but also possess excellent dielectric properties; meanwhile could be co-fired with fuse metal. Thus, develop ceramics that used in substrate material with low sintering temperature, namely, Low Temperature Co-fired Ceramics (LTCC) is presently the research trend.In this paper, first introduce foreign LTCC materials research and development, proposed key technologies of LTCC manufacturing process, demonstrate and contrast present mature LTCC components(system), put forward the research background, meaning and subject of this topic.Use X-ray diffraction, scanning electron microscope, energy spectrum analyzer, broadband LCR digital bridge etc, we systematic study the influence of additives and sintering parameter on substrate material sintering performance, phase composition, dielectric properties and mechanical performance, etc and their relationships.Using current commonly used alumina ceramic and glass ceramic substrates to prepare ceramic substrate, through apparent shrinkage testing and analysis, prefer alumina and oxide of bismuth as principal study, systematic study effect of sintering process parameters (sintering temperature, soaking time, temperature raising rate, etc.) on the basis material phase composition and fracture morphology, test basis material dielectric properties under different frequency, 1kHz, 10kHz and 100kHz. The results showed that at 900?C -1000?C, samples density and shrinkage achieve maximum; presence of whiskers at 900 ?C and 950 ?C may be caused by the generation of new phase; Regularity of changes in dielectric properties is comparatively poor, the dielectric constant is somewhat high.Due to the performance limitation of single material chip fuses which could not meet the need of chip fuse board, successive experiments choice Al2O3(40wt%-55wt%),Bi2O3(25wt%-40wt%),SiO210wt %,B2O39wt%,CaF21wt% for research. Set weight proportion of SiO2,B2O3,CaF2 as constant and optimize different Al2O3 and Bi2O3 weight proportion. Material density and shrinkage changes as the temperature changes; crystalline phase composition under various formulations, existence of a new phase and different phase; Fracture surface uniformity is representation of thermal stress impact on the microstructure, focus of this study is various components of the material dielectric constant and dielectric loss under different frequencies. The results show that the composite materials significant improvement in various aspects of performance compared with single material, densification temperature decrease, stomata reduce and with good dielectric property.Chip Fuse, as a new type of small components, is applicable to lightweight components for compact structure, small volume electronic products. Therefore, the product precision should be high. However, in sintering process, the factors that most directly affecting the quality of the product is changes of temperature field during process namely sintering curve. In the traditional ceramic sintering process, sintering curve usually based on human experience and for new components usually first experiments, which would be a waste. In this paper, by the use of analysis software ANSYS to simulate temperature field under different conditions, avoided shortcomings of traditional method and examine compliance of simulation results and experiment results, thereby reduce material waste and avoid repetitive operate.For given basic material, exploratory study co-firing of basis material and fuse unit. First choose substrate material that could match fuse material based on substrate sintering temperature, analysis interface-binding associativity of fused material and silver electrode, as well as put forward improving methods for further study.