The Research Of Deep Submicron Fully Depleted SOI MOSFET Parameter Extraction Method

With the increasingly development of SOI technology, and for the obvious advantages of SOI devices, the SOI devices has already been applied in many fields. HSPICE simulation is an effective mean to design SOI circuits, but the accurate device parameters are a prerequisite for the correct simulation, so when simulating SOI circuits under different process conditions, the first important thing is parameter extraction of SOI devices. Because SOI MOSFET contains a lot of complicated physical effects, the extracting work become troublesome. The traditional parameter extraction needs to build device model, and then choosing an extracting algorithm, so making a great calculating amounts.This thesis carries out parameter extraction with ISE TCAD to reduce calculating amounts and to improve the efficiency of parameter extraction.After analyzing the traditional parameter extraction method and flow, in view of the disadvantages of traditional parameter extraction method that the flow is fussy and it needs the massive computations, a novel parameter extraction method is presented in this paper. Firstly 0.25μm fully depleted SOI MOSFET structure is built with ISE TCAD, and what IV characters are simulated.During the simulations many physical models including the secondary physical effect model, floating body effect model, the self-heating effect model, and so on are considered. Then the simulation results are compared with the actual measure curves, when the both results are coincidental, carrying on theextrapolation using the simulation characteristic curves. Referring to the traditional parameter extraction method of body silicon devices, based on BSIMSOI the parameter extraction of 0.25μm SOI MOSFET is carried out. Finally, the physical models and the parameters of SOI MOSFET have been verified according to the Compact Model Council standard. The simulated characteristics curves of SOI MOSFET with ISE are in contrast with the actual measure curves to verify SOI MOSFET physical models' accuracy. Taking the extracted parameter into HSPICE for simulation and obtain the characteristic curves, the simulation characteristics curves with HSPICE are in contrast with the simulation characteristics curves with ISE to verify SOI MOSFET model parameters extraction accuracy. In order to verify general availability about this extraction method, the parameter extraction of 1.2μm fully depleted SOI MOSFET are also carried out.The results show that this method is also available for the parameter extraction of big dimension SOI MOSFET.