Optical And Electrical Analysis Of Rare Earth Doped ZnO Structure

We use solid-state sintering and sol-gel methods to dope rare earth into ZnO samples.Subsequent studies of the samples employ X-ray， photoluminescence and resistivity to studycorresponding properties. The X-ray analysis showed that the doping of ZnO powders still hassix hexagonal wurtzite crystal structures. Gd and Er atoms were replaced into the ZnO latticeZn locations， causing the lattice constants become larger. PL measurements showed that rareearth and Li co-doped sample has stronger emission in the whole. Resistance test showed thatresistivity increase with the doping ratio rising， and gave the corresponding theoreticalexplanations.We use first-principles full potential linearized augmented plane wave method（FP-LAPW）toinvestigatethebandstructure，densityofstates（DOS）aswellastheopticalproperties of ZnO that intrinsic and doped with Er or Gd. After research we found thatconduction band generate conductive carriers introduced by impurity atom of rare earth， theFermi level upper shift to the conduction band. The data show that due to the doping of RE，there appears the new electron occupied states around the Fermi level. Meanwhile， intrinsicZnO and doped structures have obvious differences. As the optical properties， the absorptioncoefficient and reflectivity of rare earth doped ZnO are higher than that of intrinsic ZnO invisible region and the energy loss spectra of RE doped ZnO structure occur red-shift.