Preparation And Characteristics Of Copper Oxide Thin Film

In nature, there are a lot of copper resources. Therefore, copper oxide compoundssemiconductor materials (copper oxide and cuprous oxide) have the characteristics oflow prices. At the same time they also have a safe, non-polluting characteristics.Copper oxide compounds materials have a band gap of1.2-2.6eV. They belong to thefamily of transition t oxide semiconductor material. Copper oxide compounds have aunique band gap and resistance switching property. So copper oxide compoundsmaterials have broad application prospects in solar, Photocatalyst, electrodematerials,superconductor, hydrogen,photochromic and resistance-switching randomaccess memory. In this paper Copper oxide compounds tin films were prepared bymagnetron sputtering in Silica glass substrate.The crystal structure, the surfacemorphology and Optical properties of Copper oxide compounds tin films wereanalyzed.When using DC magnetron sputtering copper oxide compounds films, KeepingArgon flow of40sccm unchanged. With the increase of oxygen flow, Copper oxidecompounds films crystal structure changes from a mixture of copper and cuprous oxideto polycrystalline cuprous oxide, and along the Cu2O (111) preferential growth; Whenusing RF magnetron sputtering copper oxide compounds films, Oxygen flow2.5sccm,Argon flow40sccm, Sputtering power100W, Working pressure1Pa, Copper oxidethin films have come out as a single ingredient preparation phase cuprous oxide. Whenoxygen flow was3sccm, Copper oxide compounds film composition may be preparedout of polycrystalline copper oxide.Studies have shown that with the increase of sputtering power, Copper oxidecompounds thin films made of polycrystalline copper oxide phase, graduallytransformed into single-crystal phase,(002) diffraction peak is not always the strongestdiffraction peak of the copper oxide, and having a preferred orientation. Byextrapolation diagram analysis, with the increase of sputtering pressure, the opticalband gap of copper oxide films showed a tendency to increase after the first decrease.At this point the other process parameters: Sputtering power100W, Oxygen flow2.5sccm, Argon gas flow40sccm, Sputtering time20min.Studies have shown that with the increase of sputtering time, Cuprous oxide-copper oxide thin film of a polycrystalline phase, and gradually transformed intoa single crystal phase.(111) diffraction peak of the cuprous oxide is not always thestrongest diffraction peak, and has a preferred orientation. From the atomic forcemicrograph of the sample analysis showing, as the sputtering time, the root meansquare roughness of the sample and the average roughness of the film is graduallyincreased. By extrapolation diagram analysis, as the sputtering time, the optical bandgap of the copper oxide thin film showed a gradual decreasing trend. At this point theother process parameters: Sputtering power100W, Oxygen flow2.5sccm, Argon gasflow40sccm, Sputtering pressure1Pa.Through this research process parameters obtained cuprous oxide prepared bymagnetron sputtering and a single-component crystals of copper oxide films. Studieshave shown that copper oxide film has a very important potential applications.