Preparation And Properties Of Copper Thin Film

Copper as the metal material plays a more and more important role in the microelectronics industry because of its good chemical properties and electrical conductivity.The microscopic texture of Cu film can directly affect the reliability and the lifetime of electronic components and life,such as crystallography orientation,grain boundary types and residual stress,and so on.Nanometer Cu thin films not only retain the original features,but also possess better physical and chemical properties than pure copper.Therefore,nanometer Cu thin film is a great membrane material of application prospect.This study uses resistance heating evaporation for making the nanometer Cu thin film under different conditions as well as uses the rapidly annealing furnace to deal with the nanometer Cu thin film respectively under the temperature of 300?,500? and 700?.The samples which are non-annealed and annealed were analyzed by transmission electron microscopy,scanning electron microscope,X-ray diffraction and hardness tester.The results showed that: the deposition rate and the evaporation intensity of electric current of Cu thin film almost form linear change.With the increase of evaporation intensity of electric current,the deposition rate is also in constant increase as well as the film grain size,and the surface of film will relatively become coarsen.With the increase of membrane thickness,the deposition rate is gradually become fast.The distance from the evaporation source to substrate is deeply influenced the deposition rate of Cu thin film.After multiple sets of experimental verification,when the distance stays 15 centimeter,between the evaporation source and the base,the deposition rate relatively is relatively high.After the XRD test,when the intensity of electric current changes between 60 A to 120 A,the growth of Cu film preferred orientation(111)crystal plane and(200)crystal plane and the intensity of diffraction peak values I(111)/I(200)are decreasing with the increase of the intensity of electric current.The rising of the annealing temperature can result the reduce of the Cu thin film(111)crystal plane interface energy and prompt it to the development of(111)and(200)texture.Crystalline interplanar spacing,under the 700? annealing,will become smaller which can improve the crystallinity,density and mechanical properties of the crystal.The deposition of Cu thin film on Si(111)substrate,the crystallinity,density and mechanical properties are superior to deposition of Cu thin film on glass substrate.Through the analysis and test of the experimental sample,it can be found the advantage of good compactness,clean surface,and high crystallinity and so on after Cu thin film under the resistive heating evaporation.