Preparation And Properties Of Zno Fluorescent Film

Zinc oxide fluorescent thin films were deposited by reactive DC magnetron sputtering on glass substrates coated with tin-doped indium oxide (ITO) thin films. The substrates were different from those silicon or sapphire substrates that were usually used to fabricate zinc oxide films by some anothers. Therefore the films can be used as anode phosphor films in field emission displays (FED) directly. In order to optimize the phosphor thin films, the substrates temperature was increased and the ambience of the reaction was changed gradually. Furthermore the samples were annealed after deposition. X-ray diffraction (XRD), scan electron microscope (SEM), four point probe were employed to characterize their structure, morphology, electrical resistivity. Photoluminescence and cathode-luminescence characteristics of these films were studied by fluorescence spectrophotometer and light intensity meter, respectively. The relations between the luminescence of zinc oxide thin films and their character including crystal structure, composition, the intrinsic defect, etc were investigated. It suggested that high crystal quality with strong orientation is important for UV and blue-green emission from ZnO films. Moreover there should have adequate oxygen vacancies and zinc interstitials for blue-green luminescence. The luminescent intensity of the ZnO thin films with poor crystal structure were very weak and various luminescence such as orange, red and violet band occurred, due to the effect of a large number of structural defects such as dislocation, grain boundary and so on.