Synthesis And Properties Of Semiconductor Chalcogenide Nanomaterials

CdS is a Ⅱ-Ⅵ semiconductor material,which has a direct band gap of 2.4eV. CdS has unique photoelectrochemical properties,it has application for optoelectronic devices,light emitting diodes,and solar cells. Sb2S3 is a kind of layer-structure Ⅴ-Ⅵ semiconductor material with a direct band gap of 1.5-2.2eV,possesses excellent photosensitivity as well as thermoelectricity,which is widely used in microwave devices,electronic equipment,solar,thermoelectric cooling devices. In this paper, a variety of morphologies of cadmium sulfide (CdS) and antimony sulfide (Sb2S3) were synthesized by solvothermal method and reflux method. We have studied the light absorption properties and electrochemical properties of cadmium sulfide and antimony sulfide.Details are as follows:Ethylenediamine, isopropyl amine and water as the solvent, Cd(NO3)2 · 4H2O and various sulfur source as raw matenals.Variety of morphologies of the hierarchical structure CdS were synthesized by solvothermal method. CdS were characterized by XRD, SEM, UV-Vis and Cyclic voltammetry(CV),respectively.The results showed that,products were wurtzite crystalline cadmium sulfide;products’ structure and morphology have a great change with different sulfur source and temperature. Product’s electrochemical band gap is 2.4eV.With the assist of chitosan, Cd(NO3)2 · 4H2O and thiourea as raw materials, spherical shell-shaped CdS were synthesized by solvothermal method.Products were characterized by XRD, SEM, UV-Vis and Cyclic voltammetry(CV),respectively. The results showed that, different sulfur source have a great influence on the morphology of the products.Have better light absorption properties of CdS that were synthesized by chitosan-assisted. Product’s electrochemical band gap is 2.3eV.PEG, CTAB and SDS as surfactant,under alkaline conditions, hierarchical structure Sb2S3 were synthesized by two steps.Products were characterized by XRD, SEM, UV-Vis and Cyclic voltammetry(CV),respectively. The results showed that, the effects is obvious on products’morphology by different reaction conditions, Product’s electrochemical band gap is 1.55eV.