Study Of The Preparation Of Mg Doped NiO Thin Film

The NiO film band gap for 3.6-4.0eV at room temperature. Although the NiO films and gap is larger than current transparent ZnO films,still can not achieved the detection of “solar blind”. In order to change the NiO band gap, we will make the appropriate doping, so that the NiO films band gap close to the solar blind band 4.43 eV. Hence, in this letter, we demonstrate NiO films by using magnetron sputtering method, and then the NiO films doped by selecting the appropriate element, so that its band gap is located in the “solar blind”, band. To make sure we can use Mg to get a good result, we create a NiO crystal structure use of Materials studio software. The work of this paper is mainly as follows:(1) By using of Materials studio software, we create a NiO crystal structure, and select the Mg element doped to get the optical properties of MgxNi1-xO thin film.(2)The undoped NiO Films are mainly by RF-magnetron sputtering directlyprepared and reacted prepared NiO films, and their structural properties, transmitted spectrum and the optical band gap.(3)Through theoretical analysis, select different doping conditions, expect band extends toward the solar blind, and the structural properties and the optical band gap of MgxNi1-xO films.