A Preliminary Study On Preparation Of The Ti₃SiC₂ MAX Phase Film

is a novel ternary layered material.it combines with many excellent properties of metals and ceramics. such as thermal shock resistance and damage tolerance, good electrical and thermal conductivity, machinability, low hardness as metals. high elastic moduli, high temperature strength, and oxidation and corrosion resistance as ceramics, as a kind of surface coating materials, the film of Ti3SiC2 has potential applications.In this paper, the film is deposited by DC sputtering from Ti3SiC2 compound target on Si (100) substrate at 20℃ and 700℃, the phase of film are TiC and Ti3Si3,in the method of annealing under vacuum condition, the Ti3SiC2 MAX phase is synthesized.but the content of Ti3SiC2 is very low, It can not serve as a technology for preparing the Ti3SiC2.thenthe Ti-Si-C mult film is deposited by MF sputtering from Ti3SiC2 compound target on Si(100)substrate, in the method of annealing under vacuum condition, the Ti3SiC2 MAX phase is synthesized.and wo study the key factors affecting the preparation of Ti3SiC2 by changing the substrate temperature, annealing temperature, the pressure of Ar,the content of C.with the knowledge of the preparation of Ti3SiC2 on Si(100),we Successfully synthesize parameters Ti3SiC2 on Clam steel substrate.and we can get some conclusions1 The Ti3SiC2 MAX phase can be synthesized by MF sputtering from Ti3SiC2 compound target with follow-up annealing2 The higher temperature of the substrate makes the surface of the film more dense and less pores, However,it increases the content of TiC resulting in the MAX phase decreasing3 High pressure of Ar gas is good for the synthesis of the MAX phase4 High temperature of annealing is conducive to the synthesis of MAX phase in the thin film5The appropriate excess C content helps to the synthesis of the MAX phase and while reducing the impurity phase6 The film of Ti3SiC2MAX phase can be synthesized with good corrosion resistance on Clam steel substrate,...