Of Pzt Pyroelectric Thin Film Materials

Recently, the fabrication, structures, properties and applications offerroelectric thin films have gained significance in the novel materials scienceall over the world. Frroelectric thin films have been paid much attection to fortheir good piezoelectric, pyroelectric, ferroelectric, electrooptic andnon-linear optical properties, and their applications in microelectromechanicalsystems, ferroelectric memories and pyroelectric detectors. PZT thin films arebeing investigated extensively in the ferroelectric materials. Because PZT thinfilms have large spontaneous polarization and small dielectric constant anddielectric loss, they are the appropriate materials for pyroelectric uncooledinfrared detectors. In this paper, the fabrication process, micro-structure andproperties of PbZr_0.3Ti_0.7O₃ [PZT(30/70)] and PZFNT[Pb(Zr_0.58Fe_0.2Nb_0.2Ti_0.02)O₃] thin films were systematically studied fromexperimental aspect.RF magnetron sputtering technology and the rapid thermal annealingprocess have been utilized to fabricate the PZT thin fims on 5-inchPZT/Pt/Ti/SiO₂/Si substrates. Analyses by the aid of atom force microscopy(AFM) and X-ray diffraction (XRD) and measurement reveal that the thinfilms have good dielectric, ferroelectric and pyroelectric properties in theoptimum process. And the thin films have the pyroelectric coefficient of 2.09×10^-8C/cm²K, dielectric constant of 630, dielectric loss of 1.4%, remanentpolarization of 26μC/cm² and figure of merit for detectivity of 2.81×10^-9Ccm/J, respectively. So the films are applicable for pyroelectricdevices. Meanwhile, the effects of parameters of the films fabricationprocess on the microstructures and properties of the thin films havebeen investigated.In additional, PZFNT thin films were fabricated on 5-inch Pt/Ti/SiO2/Siand PZT/Pt/Ti/SiO₂/Si substrates by a RF magnetron sputtering method andrapid thermal annealing process. By investigating the two thin films at various...