Preparation And Characterization Of The Stability Of The Silicon Oxide Semiconductor Quantum Dot Material

Nano-material science, referring to multi-discipline, is an important branch of material science. Because of small meters in three dimensions, semiconductor quantum dots(QD) own quantum confinement effect(QCE), quantum size effect(QSE), macroscopic quantum tunnel effect(MQTE), dielectric confinement effect(DCE), and so on. These effects decide the difference between QDs and common bulk materials. Semiconductor QDs are of importance in many applications such as microelectronics, optical communication, magnetic materials, optical materials and optical storage. All of this has been drawn considerable interests.In this thesis, we introduce the special effects such as QCE, QSE, MQTE, interaction of QDs and preparation of QD bulk and film materials. Face modification and doping, as two main QD modification methods were described simply. The basic Optical property theories of Quantum dots are also discussed in the first chapter.We have prepared SiO2 stablized SnO2 QD gel and SiO2 stablized ZnS QD gel through sol-gel-hydrothermal process. X-ray diffraction (XRD)and high resolution transmission electron microscopy(TEM) results show that the two type semiconductor QDs(SnO2-tetragonal rutile and ZnS-zinc blende)possessed well radius, crystal structure and even particle size. After Re-disperse the two gels in SiO2 sol separately, we have prepared QD films with different QD content and film thickness. Photo-luminescence (PL) spectrum and transmission spectrum have been tested already. Specially, we have discussed PL and transmission characteristics of SnO2 QD film, finding that the optical band gap increases, compared to common bulk SnO2 materials.