Of Znse Thin Film Growth And Process Optimization

As an important direct wide-band-gap II-VI semiconductor, ZnSe has been identified as a potential material for the fabrication of blue-green light-diodes, nonlinear optic-electronic components, infrared devices and thin film solar cells. In these field, ZnSe is often used as film. Therefore the fabrication of ZnSe film is an attractive topic in recent years.MBE and MOCVD mothods have been used successfully to produce ZnSe film. However, because of the high expense, MBE and MOCVD are difficult to popularize. In this thesis, we try to find some inexpensive method to produce the ZnSe film.We first produced the ZnSe film on polished singlecrystal Si wafer by Hot-Wall epitaxy method at 420℃. At higher temperature, 740℃, the growth process was found to be speeded, and a more compact film was obtained. This film has been identified as polycrystal ZnSe with zinc blende structure by XRD. By improving hydrothermal method, we fabricated uniform and compact ZnSe film at 225 ℃, Which was identified as polycrystal ZnSe. Comparing different preparation methods of the substrate, we selected an approperite one. We also optimized the parameters of growth process, based on the investigation of film character, produced at different temperature and different anneal time.To provide raw materials for vapor growth method of ZnSe film, we prepared ZnSe nanocrystals by hydrothermal method. Zn power, Se power and Diethylamine was used as the sources in this method and nanocrystal ZnSe powders were synthesized at 225℃. These powders have been identified as polycrystal ZnSe with zinc blende structure by XRD. The size of particle is about 100nm~200nm.