Cu Layer Thickness And Preparation Conditions Of Fe <sub> 40 </ Sub> The Co. <sub> 60 </ Sub> / Cu / Ni Spin-valve Giant Magnetoresistance In Different Stress

Ion beam sputtering methods were used to fabricated Ta / Fe40Co60 / Cu / Ni / Ta multilayer on the substrate of oxide silicon successfully. Multilayer giant magnetoresistance (GMR) effects with thickness of Cu layer were researched. It was found that, when the thickness of Cu multilayer is 2.6 nm, the GMR value of the prepared film reached 1.6 percent. We surveyed magnetoresistance value under different stress, and found that by adjusting the thickness of Cu layer, we can increase sensitivity of Fe40Co60/Cu/Ni spin valve resistance to stress.An external magnetic field parallel to the layers surface was added in the process of preparing the spin-valve keeping thickness of every layer invariable. The prepared spin-valve GMR value reached 2.4 percent. We surveyed magnetoresistance value under different stress, found and explained the phenomenon that under different stress magnetic resistance sensitivity increase .In the process of preparing the Fe40Co60 layer and Ni layer, an mutually perpendicular outside magnetic field was added, which can made the fabricated thin film GMR value increase to 2.3%. We surveyed magnetism resistance effect under different stress, and found that the sensitivity of spin-valve magnetoresistance fabricated by adding an perpendicular outside magnetic field are higher than without magnetic field along with the change of the stress.The FeCo layer replaced by the big magnetostriction coefficient TbDyFe material, the change between the spin-valve resistance and stress is not obvious by measuring the magneticresistance and stress.