Study On Measurement Of Turn-off Time Of RSD

High-power high-speed semiconductor switches RSD (Reversely Switched Dynistor) is a new solid converter switches based on the principle of controlled plasma layer commutation, can realize the perfect uniform among hundreds of one thousand amperes current, tens of kilovolt high voltage, microsecond nanosecond opening. There are some significant characteristics compared with thyristor: synchronization opening on the whole area, high di/dt, fast opening speed, theoretically infinite series, relatively simple trigger in series and parallel using and long service life. It is ideal for one of the areas of pulsed power.This paper describes the pulsed power technology, and simply compares a variety of pulsed power switches. Then it explains the principle of controlled plasma layer commutation for RSD, and introduced two of the thesis, the opening of the switch triggered RSD: thyristors and Insulated Gate Bipolar Transistors(IGBT).According to the actual needs of the experimental, we have designed thyristor trigger circuit and the IGBT drive circuit and buffer circuit, and IGBT drive circuit is applied in an intelligent gate drive module 2SD106AI-17 to drive and protect the IGBT to achieve its on-and off switch between the functions. Finally, there is a detailed exposition of the RSD test platform off the circuit.As RSD pulsed power devices based on new principles and pulse discharge applications need to be resolved the problem for flow switch, we are way off in the RSD on a large number of experimental research, and set up two experimental platform off. microcontroller used in the experiment to trigger the signal of the pulse width and delay time control, and saturation magnetic switch can be achieved through the main loop, pre-charging circuit on and off the isolation circuit, at the same time we have used two pulsed power switch to realize the resonant trigger. By comparing two groups of experiments, the paper analysis of the use of thyristors and the IGBT switching device caused the two experiments as the reasons for the differences and advantages of IGBT as the resonant switching, as the IGBT's switching speed faster than the SCR: when it used as resonant switching can achieve a more accurate measurement of turn-off time of RSD; and the use of SCR as part of the resonant switch off time can not measure the RSD, as resonant IGBT switches can be measured out its value. Based on the characteristics of high-speed and simultaneous turn-on, infinite series, high power, high efficiency of current transformation and long life, RSD will obtain important applications in pulsed power technology. Therefore, the study of turn-off time of RSD and the improving of measurement accuracy is important on our application of RSD.