| The application of nitrogen (N) and silicon (Si) can affect the morphogenesis, dry matteraccumulation, nutrient uptake and lodging resistance in rice. The study of applying proportion ofN and Si is an important research field in high-yielding rice cultivation. The field experimentincluded sixteen treatments on combination applying of N and Si: N0Si0, N0Si5, N0Si8, N0Si11,N6Si0, N6Si5, N6Si8, N6Si11, N10Si0, N10Si5, N10Si8, N10Si11, N14Si0, N14Si5, N14Si8, andN14Si11, respectively. The cultivars used in this study were Zhongzheyou1, Chunyou658, Jiayou2and Xiushui9. The experiment was aimed to investigate the effects of combination applying ofN and Si on the yield, yield components, absorption and accumulation of nitrogen, phosphorus (P)and potassium (K), and the lodging resistance in rice. The results could provide technical supportfor the optimal proportion of combination of N and Si in the field of high-yielding rice cultivation.The main conclusions in this study are as follows:1. On the condition of the same N rate, the different Si application rates showed differenteffects on the yield and yield components of rice. The application rate of Si8was medium Si rate.The rice yield of N10Si8was highest, which was significant higher than the other treatments.therice yield in different treatments was N10Si8> N10Si11> N10Si5> N10Si0, and the fourcultivars used in this study showed the same trend. The yield increasing trend for N0which wascontrol and N14which was high N rate was consistent with the medium N rate when combinedwith Si. On the condition of N6which is low N rate, the rice yield was increased with the increaseof Si rates, the treatment for highest yield in this N application rate was N6Si11, and the yieldtrend was N6Si11>N6Si8>N6Si5>N6Si0. On the view of yield components, combination applyingof N and Si increased the yield by increasing the number of grains per panicle and effectivepanicles.2. Combination applying of N and Si increased the N content and P content in rice leaves andstems, but decreased the K content in the rice straw in mature stage. The effects of application ofSi with different N rates on nutrient accumulation were different in different rice growth stages,also, the effects of application of N with different Si rates on nutrient accumulation showed thesame law. On the condition of N0and N6, the P and K accumulation in rice leaves and stems wereboth increased with the increase of Si rates. On the condition of N10and N14, the treatment of Si8was the optimal Si rate for accumulation of N and P in rice leaves and stems. The response of Kcontent of rice strew to different N rates and Si rates in mature stage was contrary to the N and P,and on the condition of same N rate, the K content of rice strew in mature stage was decreasedwith the increase of Si rates.3. The results showed that the application of silicon increased the lodging resistance for ricestem. The four rice cultivars showed consistent trend, that is, broken moment was positivelyrelated to the breaking-resistant strength and was negatively related to the bending moment andlodging index. The bending moment and lodging index for N0and N14were decreased with the increase of silicon rates, while the broken moment and breaking-resistant strength were increasedwith the increase of silicon rates. On the basis of N6which is low nitrogen treatment, the bendingmoment and lodging index of four rice cultivars were increased with the increase of siliconapplication rates, and the trend for different treatments was N6Si0>N6Si5>N6Si8>N6Si11. On thebasis of N10which is medium nitrogen treatment, the trend for bending moment and lodgingindex was N10Si8> N10Si11>N10Si5>N10Si0. In conclusion, combination applying of nitrogenand silicon can increase the lodging resistance of rice stem by increasing the stem diameter andstem wall thickness of basal internodes, shortening the length of basal internodes and improvingthe stem plumpness. |
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