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Low Dimensional Growth Of ZnSe And Opticalcharacteristic

Posted on:2013-12-27Degree:MasterType:Thesis
Country:ChinaCandidate:X T LiFull Text:PDF
GTID:2231330377955623Subject:Materials Physics and Chemistry
Abstract/Summary:PDF Full Text Request
ZnSe is a semiconductor crystals belongs to direct band gap II-VI group. ZnSe has good optical characteristics on high mid-infrared transmission rate and large scale application etc. ZnSe is widely used in infrared window materials, multi-junction tandem solar cells and electroluminescent devices etc. Currently, ZnSe thin-film material is much widespread availability than other form of ZnSe materials. It has wide development widespread, and receives much concern.The paper states the ZnSe thin-film on ITO glass substrates has been prepared from ZnSO4and SeO2’s electrolytic solution by electrochemical deposition method. It researches influences of electrodeposited conditions on ZnSe thin-film crystal growth including concentration ratio of n(Zn2+)/n(SeO32+), ampere density, temperature and PH value. The paper adopts EDS, XRD, SEM and infrared transmission to text and analyze thin-film’s characteristics and optical property.
Keywords/Search Tags:infrared window material, ZnSe thin-film, electrodeposited condition
PDF Full Text Request
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