Design And Simulation Of Heating System Of SiC Single Crystal Growth Equipment

With the development of semiconductor technology, the traditional first generation material of Si and GaAs, the second generation material, because the configuration and characteristic of themselves, they all have some deficiencies and limitations in high temperature, high frequency and high power. A new series of semiconductor materials such as SiC, GaN, and diamond and so on are drawing more and more attention.Because the properties of wide band gap, high critical breakdown field, high electron mobility, high thermal conductivity, SiC material has been seen as one of the most promising semiconductor materials in semiconductor filed. Due to the unique physical properties of SiC material determined its importance in artificial satellites, rockets, radar, communication, battleplane and reaction engine fields and so on. Therefore developed countries have invested large numbers of human and material resources to do relative technical research and kinds of related products gradually be developed.The investigation of SiC single crystal has became a hotspot in semiconductor materials filed and has been got a quiet great advancement, but there is still a distance of large-scale application. In many technical problems, SiC single crystal growth equipment can influence SiC single crystal growth important.The subject according to the requirement of SiC crystal growth progress, based on many years research and characteristics of PVT crystal growth, designed the induction heating power require by achieving growth temperature and which satisfied the use of graphite crucible structure, thermal insulation setup, the induction coil structure of crystal growth. At the same time to use ANSYS multi-physics coupling analysis software, predigest three-dimensional solid model of the growth furnace in reason, establish the finite element model which fit for analysis and use of simulation software and simulate the heating system of growth furnace. To use the electromagnetic and thermal analysis module of ANSYS for analyzing and discussing factors which can influence heating system of crystal growth and get some valuable research results in practical applications and theoretical research.