Experimental Investigation Of Nano Copper Deposition Film By Modulated Pulsed Power Magnetron Sputtering

In the different average and work preesure Copper films were deposited by modulatedpulsed power closed field unbalanced magnetron sputtering(MPPCUMS) techniques forstudying on charge voltage, pulse width, frequency, τon(the width of micro pulses)/τoff(thedistance between micro pulses) and work pressure how to affect peak current, peak voltage,peak power and average power. Discharge characteristics were studied by oscilloscope inmodulated pulsed power magnetron sputtering system. Using different average Power anddifferent work pressure Copper films werd pedosited, The phase microstructure, top view andcross-sectional morphology of Cu coatings were characterized by X-ray diffraction (XRD)and field emission scanning electron microscopy (FE-SEM); The film thickness was meteredby stylus profiler; The hardness and modulus of films were researched by nanoindentor.Using these analytical methods finds relation between composition, microstructure andproperties to search for the optimal process. The results indicate that:Charging voltages change in the range of350V to600V, increasing the charge voltagemakes peak current (Ip), peak voltage (Vp), peak power (Pp) and average power (Pa) increased.When τonincreased from6μm to14μm or τottdecreased from16μm to8μm (step2μm), itcan make Ip, Vp, Ppand Paincrease. Hence, peak current and peak power can be adjusted bycontrolling τon/τoffor charge voltage. When the pulse width increased from500μm to1500μm Paincrease from1.7kW to4.9kW, and pulse frequency increased from50Hz to150Hz,Paincrease from0.8kW to2.8kW, Pawith pulse width and pulse frequency is linear growth,Ip, Vp and Pp is76.8A,514V and3.8kW, respectively. their values has remainedunchanged.Copper film is layered structure, compact structure,(111) preferred orientation, graingrowing and with increasing power, as average power increase from1kW to3kW, averagegrain size increases from80nm to140nm, critical load also increased from17.4N to20N,and e largest Ra is the0.012μm at4kW, while the roughness (Ra) was little changed. Withthe increase of work pressure, the grain is growing from80nm to120nm, Ra increased from0.006μm to0.009μm, but critical load don’t change in the180N. the thin film change fromlayer structure to the column structure,(111) preferred orientation become stronge.When the average power is2kW and work pressure is0.3Pa, Hardness and elasticmodulus of Cu films is3.2GPa and140Gpa deposited Cu films by MPPMS,respectively.Compared with pulse direct current mangetron sputtering (PMS), their is higherthan0.4Gpa and10Gpa, the quality of films was improved.