Preparation And Its Transport Properties Of ZnO Nanowire Field-effect Transistors

This paper adopts the methods of nanowire preparation, assembly, testing and analysis, using a single ZnO nanowires prepared by ZnO nanowire field-effect transistor (FET). Study the influence of various parameters on the device I-V characteristic, at the same time, the paper also introduces the ZnO nanometer and semiconductor micro-nano electronic device’s latest research progress and hot research topics at home and abroad. The thesis consists of four chapters, mainly dI-Nided into:(1) introduced the basic knowledge of nanometer science and technology, the basic performance of nano-materials and corresponding applications; Nano materials and nano semiconductor devices at home and abroad are reviewed, the typical micro-nano semiconductor devices were classified, and introduced the corresponding working principles.(2) introduced the ZnO semiconductor nanowire preparation methods, and use chemical vapor deposition (CVD) under various conditions preparing the ZnO nanowires, and the ZnO nanometer lines in the experament were analyzed and characterized.(3)With single ZnO nanowires, four different metal electrode ZnO nanometer line FET were made. The main methods were as follow:first of all,this paper used thermal oxidation method, a layer of SiO2insulating layer was grown on the Si film; and then a thin metal film was plated on it, three metal (Au, Zn, Al) respectI-Vely were choosing evaporated on the Si film surface, an isolation trench was made in each metal film etching respectI-Vely used ion etching technology, the sides of the channel as the FET edge electrode and the drain electrode, on the back of the Si layer as the gate; by the help of electrostatic probe and atomic force microscopy, choose a ZnO nanometer lines across the two metal electrodes, a simple ZnO nanometer line FET was preparated.(4) Differents ZnO nanometer line FET devices’ Ⅰ-Ⅴ were tested and analyed; repeated experiments more, ZnO nanowires FET transport properties and its influence factors were analyed. I-V curve shows the ideal diode rectifying properties. The study found that the spontaneous formation of the Schottky diode is due to the asymmetric contact formation between the single ZnO nanowires and the two metal electrodes, these diodes of the transport properties depend greatly on the nanowire dimensions. For small diameter (～250nm) ZnO nanowires, it is easy to form a Schottky diode. Finally, by three different gate voltages of+5,-0,5V and I-V current source voltage characteristic curve. This feature proved that ZnO nanowire field effect transistor was n type equipment. With Au as electrode of nano ZnO field effect transistor of the transport properties was the best; the diode or a field effect transistor based single ZnO can be used for a variety of equipment utilization based ZnO.