Polyimide/Inorganic Mesoporous Composites Of Preparation And Properties

Abstract:Currently, the development tendency of integrated circuit (IC) is high speed and high integration. It is necessary to develop low dielectric constant and high temperature resistant materials which would meet the signal transmission quality, restrain the increasing power dissipation and IC parasitic capacitance of the interlayer caused by dielectric loss. Polyimide (PI) shows superior comprehensive performance. Double mesoporous SiO2has a low dielectric constant and mesoporous TiO2has a high thermal stability. Therefore, the PI and inorganic mesoporous materials were selected as a matrix and filler of low dielectric composites respectively.The results showed that we had successfully prepared double mesoporous SiO2by using the template in a weakly alkaline aqueous solution and the mesoporous TiO2was obtained by hydrothermal method. PI/double mesoporous SiO2composite materials were prepared by in-situ. TG, UV-vis, water absorption and dielectric constant performance analysis showed the composite materials had good heat resistance (the initial decomposition temperature was greater than500℃). The UV wavelength of PI composite materials was broadened by adding double mesoporous SiO2. The composite materials showed good transparency in the visible region and the water absorption of the composite materials were significantly reduced (BPI composite materials decreased from1.248%to0.854%; PPI composite materials decreased from1.235%to0.781%). The dielectric constant of PI composite materials were significantly decreased due to the addition of double mesoporous SiO2(the minimum value of BPI composite materials was2.386, the minimum of PPI composite materials was2.374).PI/mesoporous TiO2composite were prepared by coupling agent modified mesoporous TiO2in situ. TG, UV-vis, water absorption and dielectric constant performance analysis showed that PI composite materials had good heat resistance (the initial decomposition temperature was greater than500℃). The UV wavelength of PI composite materials was narrowed by the addition of double mesoporous SiO2. The composite materials showed good transparency in the visible region and the water absorption of the composite materials were significantly decreased (BPI composite materials decreased from1.248%to0.854%; PPI composite materials decreased from1.235%to0.781%).The dielectric constant of PI composite materials were increased with the addition of high dielectric constant mesoporous SiO2(the maximum value of BPI composite materials was about5.3, the maximum of PPI composite materials was about5.4)In short, the comprehensive performance of PI composites which were added double mesoporous SiO2and mesoporous TiO2were significantly increased and it were expected to be applied in the microelectronics field of large scale integrated circuit.