Experimental Research Of Compound Particles Chemical Mechanical Polishing On Silicon Wafer

Compound particles chemical mechanical polishing (CP-CMP) is a new chemicalmechanical polishing(CMP) method, in which polymer particles added to the slurryinstead of the conventional polishing pad. In this paper, by using polystyrene(PS)microsphere and resin microsphere(MV) as micro polishing pad of CP-CMP, CP-CMPpolishing of silicon wafer is realized, and that, this paper analyzed the effect of glassplate’s roughness and microsphere’s concentration on polishing of silicon wafer,analyzed the polishing theory.In the chapter 1, the paper summarizes the application and development of CMPmethod, introduces detailedly the research what experts domestic and foreign do incamp field, presents the research background, significance and content of this paper.In the chapter 2, this paper introduces the principle of CMP method and theinfluence factors of CMP process, according to the particles and the colloidal silicaabrasives in the slurry electrically attracting or repelling each other, put forward twomodels of CMP method.In the chapter 3, on the basis of DLVO theory, according to the requirement ofCP-CMP slurry to particles, selecting PS microsphere and MV microsphere ascompound particles in slurry, using Zetasizer3000HSA to measure the zeta potential ofPS microsphere surface, using TEM to observe the microspheres and the colloidal silicaabrasives, then the absorption state of particles is verified.In the chapter 4, using the CP-CMP method, polishing of high removal rate and lowsurface roughness is realized, moreover, it is obtained that material removal principle of silicon wafer CP-CMP method at the state of the microspheres and the colloidal silicaabrasives attracting each other. Using Taguchi Method, establishing experimentalconditions and experimental plan of various parameter groups in these conditions, withless time of experiments, parameter group of silicon wafer’s high removal rate is found.Based on this group of parameters, further polishing experiments on silicon wafer aredone, the effect of the roughness of glass plate and the concentration of microsphere onpolishing of silicon wafer was analyzed.In the chapter 5, the main conclusions were gathered up, besides the future tasks onthis project were pointed out.