Synthesis And Properties Of Nano-Graphene By Plasma Enhanced Chemical Vapor Deposition Method

For its unique structure and electronic properties, such as high mobility, room temperature quantum Hall effect, graphene has attracted interests from both theoretical and experimental researchers. Extremely high electron mobility with respect to the silicon carrier mobility makes graphene a promising candidate to replace silicon as the future nanoelectronic circuits’ main material. Graphene can be synthesized through a variety of different methods,including mechanical exfoliation, epitaxial growth, chemical vapor deposition and the reduction of graphene oxide. Some of these methods, such as chemical vapor deposition(CVD) and reduction of graphite oxide can be large-scale preparation method. The graphene films prepared by chemical vapor deposition also with high quality, with can be used for electronic devices. However, the chemical vapor deposition method is incompatitive with current mature microelectronics process, due to its high temperature process. Searching for a convenient low temperature synthesis method under the scale of silicon technology is an important factor for integration of graphene-based devices.Plasma-enhanced chemical vapor deposition method(PECVD) is a common method in microelectronics technology, which commonly used for film preparation, etching, and doping. In this paper, PECVD was used for nano-graphene deposition at low temperature. The mechanism of growth process and the impacts of different parameters on the film preparation were systematically studied. The main contents include:1. Explore the mechanism of graphene growth by capacitively coupled RF plasma chemical vapor deposition under low-temperature conditions with and without catalyst. Characterization of the prepared films was carried with scanning electron microscopy and Raman spectrum. Parameter effects were carefully studied including plasma power, gas composition, preparation time and other factors to the film morphology and structure.2. Two-terminal devices was fabricated for electrical properties study. Resistance switching effect was observed in such devices under ambient environment. The mechanism of such resistance switching effect is discussed.