Preparation Of Graphene Film By RF-PECVD Method And The Study Of Mechanical Properties

Graphene has excellent properties and can be used in electronic and optoelectronic devices,composite materials,energy storage,biomedical engineering and other fields.The main direction of modern graphene research is to explore new graphene derivatives and their applications in the field of product and device manufacturing.The application of graphene to the manufacture of electronic equipment or precision components can extend its service life,reduce the existence of potential safety hazards and improve its safety performance.At present,the main industrial preparation method of graphene,namely the CVD method,requires high temperature,which makes the preparation process of graphene difficult.This experiment uses a radio frequency plasma chemical vapor deposition(RF-PECVD)system and uses a radio frequency transmitter to convert the gas phase carbon source into a plasma state,which reduces the temperature requirements of the reaction,and successfully prepares a microscopic surface with better morphology and defects.Graphene film with lower and higher overall quality.1.The experiment was designed with single factor variable method,and graphene film was successfully prepared using RF-PECVD 400 equipment system.Explore the influence of each experimental parameter on the sample,explain its mechanism of action,and obtain the optimal solution of the experiment,that is,temperature 750?,reaction pressure 750Pa,reaction time 50min,RF power under 250W and CH4:H2:N2=1.75:2:6.In this case,the graphene film with the best phase is prepared.The microscopic morphology and composition of the prepared film were characterized by SEM,Raman spectroscopy,XRD,atomic force microscopy,XPS and other analytical methods.2.The mechanical properties of the obtained graphene film samples were characterized by instruments such as microhardness tester,friction coefficient tester and electrochemical corrosion tester.Through the analysis of the friction coefficient,the research shows that the order of the influence of each process parameter on the sample friction coefficient is:reaction temperature>RF power>reaction pressure>gas flow ratio.Through the analysis of its microhardness,the research shows that the order of the influence of various process parameters on the film-forming microhardness is:reaction temperature>gas flow ratio>RF power>reaction pressure.3.The reduction effect of hydrogen as an auxiliary gas on the copper substrate,the etching effect on the amorphous carbon and the cracking effect on the gas phase carbon source during the experiment are studied.Explore the most effective use of hydrogen in the experimental process:in the pretreatment stage,at 500? inject 30sccm of hydrogen for 40 minutes,which has the best promotion effect on the final film quality of the experiment;in the reaction process,when the total flow When it is 97.5 seem and CH4:H2:N2=1.75:2:6,the ions ionized by hydrogen can destroy the carbon-hydrogen bonds in the carbon source gas methane most efficiently,thereby maximizing the plasma degree of gas-phase carbon source.