Preparation And Properties Of TaN Thin Films By RF Magnetron Sputtering

TaN film has a lot of excellent performance while transition metal nitride films do not have, especially with the property of high thermal stability, low resistivity, high melting point, interfacial stability, high hardness. TaN fims are widely used as metals and semi conductor in microelectronic integrated circuit or anti diffusion layer between dielectric. High density integrated circuit at running time need dissipate the heat generated soon, in order to reduce the thermal noise and avoid the CPU speed limit raise, computer chip (IC) and integrated circuit radiating effect with thermal diffusivity of thin film materials is directly related.In addition, when the TaN film is used as an anti diffusion layer, it is usually required to have a small surface roughness, so that the friction loss between circuit and circuit can be reduced. However, in the experimental study, the study on the surface roughness of TaN thin films is very few, and there is little research on the thermal diffusivity of TaN thin films.Therefore, producing high quality TaN thin films, and the research on the surface roughness and thermal diffusivity have important practical significance.In this paper, TaN thin films were deposited onto commercial polished SiO2 substrates by RF magnetron sputtering, which bombarded the TaN target directly (99.99% purity). The effects of sputtering power, pressure and substrate temperature on the deposition rate, structure, surface roughness and thermal diffusivity of TaN thin films were investigated. Through the experimental study, we obtained a series of valuable research results:1:The deposition rate increases with the increase of sputtering power and substrate temperature. For sputtering pressure, we can obtain the maximum values of deposition rate when the sputtering pressure is 1.0Pa. Otherwise, the increase or decrease of pressure will decrease the deposition rate.2:The structure and surface roughness of TaN thin films are sensitive to the parameters. When the sputtering power is 200W, the sputtering pressure is 0.0Pa and the substrate temperature is 300℃, we can obtain the TaN film with ideal structure and surface roughness.3:The process parameters mainly through effecting the structure and the thickness of TaN thin films to impact the thermal diffusivity, the greater thickness and crystallization effect of thin film, the bigger thermal diffusivity is.4:Compared with conventional reactive sputtering, TaN thin films deposited by radio frequency magnetron sputtering which directly bombarded the TaN target show good(111) preferred orientation, which is beneficial to the increases of thermal diffusivity.