Research On MOCVD System In GaAs Solar Cell Application

In this paper, some problems affect the performance of solar cells in the productionof GaAs solar cell process in MOCVD system, identify solutions and implementthem.In the case of ensuring the normal operation of the MOCVD system at the sametime, improve the photoelectric conversion efficiency of the triple-junction solar cell.The specific contents are as follows:MOCVD system is a very complex overall, by the MOCVD equipment and moreequipment. This article describes the works and role of each part of the MOCVDsystem will appear in the course of the surface of epitaxial wafers fallout, growthtemperature drift component instability of the epitaxial layer, substrate processing, airtightness of the reaction chamber, spare parts cleaning and other issues, these issueswill affect the quality of the growth of GaAs solar cells.Developed a technology to improve the photoelectric conversion efficiency of theGaAs triple-junction solar cell pathway, three junction cells in the three subcelloptimize each parameter. Improve the overall current of the solar cell, the batterycurrent match more reasonable. Study solar cell tunneling junction, was added in thebattery of the quantum well structure, to resolve the mismatch of the material epitaxialtechnique. Optimize the solar cell electrode system, to improve antireflection filmeffect and device process. The purpose of every aspect of a great help to improvebattery performance, to improve the photoelectric conversion efficiency oftriple-junction GaAs solar cell, the final triple-junction GaAs solar cell efficiency of30.26%.