Study On The Formation Of Si(337)-4×1Structure Using UHV-STM

In the process of one-dimensional metal wire growth on the Si(5512) surface with ultra-high vacuum scanning tunneling microscopy, Si(337)-4×1structure is discovered. It is found that Si(337)-4×1is a ultra stable structure with low defect density. It can be expected as a good template for nanostructure growth. However, up to now, there is no routine method to fabricate Si(337)-4×1. Therefore, it is necessary to study the formation reasons of Si(337)-4×1surface and then fabricate this structure. The possibility is considered from two aspects:Firstly, is it induced only by high temperature annealing? Secondly, is it due to the residual C existed in the UHV-STM chamber? For this purpose, results from four experimental studies are analyzed:the one is heating several kind of Si(5512) vicinal surface at high temperatures, and the others are adsorbing Ge, C2H2, and O2on Si(5512)-2×1surface, respectively. The orientation dependence of this kind of structural phase transition from Si(5512)-2×1to Si(337)-4×1is studied as well. To achieve this structural phase transition, an energy barrier need overcome, and a large amount of atoms must be moved for meet the orientation difference, which is performed by surface melting process via high temperature annealing. This phase transition has the orientation dependence but is not induced by the adsorption of carbon.