Theoretical Study On InGaN All-solid-state Solar Cells Based On Photon Enhanced Thermionic Emission

The new solar power technology based on photon enhanced thermionic emission（PETE）can combine solar-thermal power generation with photovoltaic power generation,which theoretically can achieve higher photoelectric conversion efficiency,so it is of great practical significance to study the solar cells using PETE effect.Since the development of PETE solar cells is limited by high temperature and its vacuum structure is difficult to build,an all-solid-state solar cell based on PETE is constructed in this paper.And because the materials currently being studied by PETE mainly focus on theⅢ-Ⅴbinary compounds,the studies on theⅢ-Ⅴternary compounds are less.Therefore,in this paper,the PETE all-solid-state solar cells are studied by using the ternary compound In Ga N,which has excellent characteristics in theⅢ-Ⅴclan,and the device structure design and theoretical simulation of the PETE-based In Ga N all-solid-state solar cells are carried out.The main work and findings are as follows:1.PN and PIN type all-solid-state PETE solar cells were constructed,and different doping types of In_xGa_1-xN were used as absorption layer and barrier layer to build PN type and PIN type all-solid-state PETE solar cells.The AMPS-1D software was used to simulate and analyze the PN-type heavily doped absorption layer,and it was found that when the p-type doped concentration N_A≥3.94×10¹⁹ cm^-3,the p-type narrow gap band In_xGa_1-xN absorption layer was heavily doped.2.Using AMPS-1D software to simulate the PN and PIN all-solid-state In Ga N solar cells based on PETE,the results show that the best combination of PN type all-solid-state solar cells is absorption layer In group was 0.75 and barrier layer In group was 0.58,the conversion efficiency can reach 31.333%,and the conversion efficiency can reach 30.872%for the combination of PIN type all-solid-state solar cells with absorption layer In group was 0.75 and barrier layer In group was 0.59.3.The doping concentration of barrier layer can adjust the barrier height and improve the photoelectric conversion efficiency,so the doping concentration of barrier layer is not too large.For PN type,the doping concentration of barrier layer is not more than 2×10¹⁹ cm^-3,and for PIN type,the doping concentration of barrier layer is not more than 1.5×10¹⁹ cm^-3;The PN type is better in structure and performance than the PIN type and the conversion efficiency of PN type is always higher than that of PIN type at high temperature.4.The optimum thickness of P heavy-doped In_0.75Ga_0.25N absorption layer is between 500-600 nm for all-solid-state solar cells;Front and back interface recombination affect the efficiency of PN all-solid-state solar cells,and the front interface recombination has a greater impact,so measures should be taken to reduce the front interface recombination.