Ozone Oxidation Producing Pid Resistance Effect On Monocrystalline Silicon Solar Cells

Monocrystalline silicon solar cells, for its high conversion efficiency (lab conversion efficiency reached 25.6%, the average efficiency of industrialized production reached 19.5%), and mature production technologies, has always been the focus of the photovoltaic industry development. This paper describes a method to product Monocrystalline silicon solar cells which has the ability of anti-potential induced degradation (PID) effect, by introducing the ozone oxidation technology into traditional monocrystalline silicon solar cell production process. By using this technology, it formed the SiO2-SiNx passivation antireflection film structure on the cell surface, and studied the microstructure of generated passivation antireflection film, the optical performance and electrical properties performance of the cell production.Using ozone to oxidize 10 s on the surface of the silicon wafer, the surface of the wet-etched silicon wafer generates a nanoscale SiO2 film on the silicon wafer. The results showed that when the ozone concentration>1200 ppm, the hydrophilic test results are consistent with the anti-PID technology standards. The generated SiO2 film thickness was about 10 nm. By using plasma-enhanced vapor deposition (PECVD) technology and controlling the flow ratio of SiH4 and NH3 and deposition time, at a temperature of 460 ℃, the surface of the sillicon produced a double layer nitride antireflective film with different dense degrees. The test results showed that the silicon nitride film containing more Si was much denser. The total thickness of the silicon nitride film is about 70-82 nm, and the refractive index was about 2.1000 ± 0.0800. Finally, the electrical performance testing of the cells prepared by these two technologies show that the open-circuit voltage and the average conversion efficiency have enhanced.