An Improved Compact Model For Radiation Hardened SOI MOSFETS

Compared with the traditional bulk silicon, SOI materials have some advantages such as high integration density, powerful ability of anti-radiation, low power consumption, high speed, more suitable for devices of small size and so on.It can overcome the deficiency of bulk silicon material, play the potential of silicon integrated circuits at the highest degree. SOI MOSFET is more suitable for radiation-hard circuits and high-temperature electronics. SOI CMOS is widely used in aerospace systems, nuclear power electron equipment, military engineering, and other special applications. Radiation effects of radiation environment will cause electronic damage to components and integrated circuit, leading logic errors or permanent damage,affecting the stability and reliability of electronic systems. So it is important to study and improve the performance of radiation hardened SOI devices.This thesis first studied the physical mechanisms of SOI CMOS, device model and model parameters in the radiation environment, then analyzed the total dose radiation effects on microelectronic device performance, and developed a SOI CMOS radiation hardened model.The major work is as follows:Firstly,we made detailed description about the basic physical characteristics of SOI MOSFET devices, by analyzing the total dose radiation effects and the existing anti-radiation technology at present, explored the electrical properties of SOI CMOS device degradation mechanisms such as threshold voltage shift, subthreshold slope change(leakage current increases), etc.Then we introduced some anti-irradiation performance presented by SOI MOSFET. Based on the device model for circuit simulation, we built the radiation hardened model for SOI MOSFET successfully, providing a bridge between the process and circuit design.In a word, we made a research of anti-radiation properties of SOI devices, and completed the study of 0.8??m SOI CMOS SPICE model parameter extraction and validation in the base of the BSIM3 SOI model, and an improved radiation hardened model has been developed to improve the success rate of radiation-hardened circuit design.