The Process Research Of Cu/Co Multilayer Films Prepared By Jet Electrodeposition

People have done a lot of research on how to improve the performance of the material for a long time. Deposition a layer or multilayer films on the substrate is an important way, because they have different properties. Nano-multilayer films with unique mechanical, optical and magnetic properties, have got more and more attention. Its preparation methods are also constantly improved. Some advanced physical and chemical methods have been successfully applied to the preparation. Overall, the preparation methods of multilayer films mainly include physical method, chemical method and electrochemical method.The existing physical methods of preparing multilayer films process complex, high equipment requirement and expensive cost; the chemical methods prepared films are not uniform, porous coating and poor adhesion strength and the electrochemical method not easy to automatic control and easy oxidation, dissolved. In this paper, using the designed Jet Electrodeposition process system prepared the Cu/Co nano-multilayer films with high-efficiency and low-cost under normal environment.For the problems such as poor precision of electroforming spot and non-uniform of deposition layer by Jet Electrodeposition on silicon substrate, system researches have been started. By optimizing the nozzle structure and improving the electricity method solved above problems partially. The main research contents are as follows:(1) Optimization design and validation of the nozzle flow based on the 3D printing technology. For the floe field non-uniform of traditional rectangular slit nozzle, Using the FLUENT software to analyze the nozzle flow field. Given the result of velocity field, through the analysis of the velocity distribution to improve the spray nozzle export structure; Using 3D Printing Technology(SLA) to print the preliminary optimization of exports shape of the nozzle, and doing the validation testing;(2) Study the continuous and control deposition on the silicon substrate. The classic experiences of deposition on metal are not applicable, because the special semiconductor properties of silicon. So need to establish a model of electrodeposition on silicon. Using ANSYS analysis the electric field of model, thereby improve the cathode artifacts into electricity way so that the deposition of multilayer films more stable and efficient on silicon substrate;(3) The microstructure analysis and performance test of Cu/Co multilayer films. Prepare several groups of multilayer films under different parameters on the silicon substrate by Jet Electrodeposition. Analysis how the main parameters(current density and scanning speed) affect the surface and cross section morphology, roughness and hardness of multilayer films. Choose the multilayer films prepared by different current density to XRD analysis and giant magnetoresistance(GMR) test.