Research On Fabrication Process And Properties Of The ZnO Film Based On Atomic Layer Doposition

How to make the nano-thin film which is highly transparent and conductive has been widespread concerned. Because of the scarce sources of the conventional transparent conducting oxides material ITO and toxic fumes will be produced in the process, A new transparent conducting oxides is needed as a substitute for the ITO. Because of the Zn O film is transparent, conductive, non-toxic and inexpensive, Zn O has become a hot material as ITO alternative. ALD technique developed for thin-film deposition in recent years, the ALD deposited film has broad application prospects in the electronics manufacturing field because of its excellent physical performance, controlled thickness and shape retention. In this paper, The self-developed atomic layer deposition system is used to deposite the Zn O thin films as the transparent conducting oxide and do some process research and property analysis of the Zn O.1. The influence of zinc source pulse time for Zn O films growth and performance was studied first. Within a specific range, the film growth rate is gradually increased with increasing zinc source pulse time and stable over 2 s. Then the influence of deposition temperature on the Zn O film quality was studied. As the deposition temperature increases, the conductivity of the film increases to 1.81×102 / cm / ?(150 ?), and the overall surface roughness is also improved.2. The influence of deposition temperature and purge time for Al2O3 deposition rate and film properties was studied. It was found that the film deposition rate decreases with increasing the growth temperature and longer purge time. But the film is more compact, which can make the film surface quality, dielectric strength and insulation improved significantly. When the deposition temperature increase to 150 ?, the dielectric strength can be up to 9.2 MV/cm, and also with low defects.3. For the problem of defects and performance improvement of Zn O film, the aluminum doping into zinc oxide experiments were did with the multi precursor ALD. Some theoretical analysis of the AZO doping reaction was also done and the doping concentration is calculated. By controlling the ratio of aluminum doping into zinc cycle, The Al doping rate concentration can be asjusted. The influence of different Al atomic ratio for AZO film properties was also studied, and some test were done to choose the best doping rate of the AZO film.4. The AZO film was used to instead of the ITO film to test the performance of Ti O2 photocatalysis device. Ti O2 on the AZO film achieve the maximum quantum efficiency of 11%, it is decreased about 20% compared with the ITO film quantum efficiency values, increased more than 40% compared to the Zn O film. The test experiments shows AZO performance has been greatly improved than Zn O film, it can be possible as a new transparent conductivng oxides as alternative materials of ITO film.