| People have always hoped that solar cells can be used in smart electronic devices to supply power.Traditional solar cells basically exist in a flat form.However,traditional hard planar solar cells have poor deformability and short relay distance in use,which limit their use For applications and developments in complex fields such as communications,biomedical equipment,marine engineering,chemical sensing,and military scenarios,although a few planar devices can achieve flexibility with the help of flexible polymer materials,solar cells are bulky and poor in weaving performance.It is also relatively difficult for this type of battery to meet the broad application requirements of lightweight and integrated product modules in the field of portable and highly integrated microelectronic devices in the rapidly developing electronics industry.In order to solve the disadvantages of the application and weaving of solar cells,this paper proposes optical fiber as the substrate of the battery,and uses magnetron sputtering method to study the preparation process of CIGS thin-film solar cells on the side of the optical fiber.The advantages of indium gallium selenium thin-film solar cells are effectively combined,so that photovoltaic cells not only have the advantages of flexibility,light weight,multi-angle light collection and wide application prospects,but also provide new types of photonic devices in airships,underwater robots,satellites,and micro Application requirements for special curved surfaces and high integration integration of power supplies for medical equipment and military electronic communication devices provide possibilities.The main work of this paper includes:(1)According to the target substrate of the subject research,a set of cylindrical substrates that meet the requirements of flexibility or rigidity are designed to be suspended in the vacuum magnetron sputtering coating machine chamber without being rotated at a uniform speed by external force,and can complete uniform coating and coating on the side of the substrate.Coating fixture for layered coating masks.(2)Based on the analysis of the preparation process and related characteristics of the CIGS absorber film based on the optical fiber substrate,by adjusting the ratio of the three target elements of copper indium gallium selenide,copper gallium selenium and indium selenide,the CIGS absorber film crystal The content of the internal Se element increased from 38.82%to 50.42%,which has been significantly improved,which can effectively solve the problem of the lack of Se element.The successful use of selenization-free hybrid fractional magnetron sputtering instead of the selenization process will generate H2Se toxic gas The traditional preparation process to prepare CIGS composite absorption layer film.(3)In the experiment,the effect of adjusting the sputtering sequence and time on the performance of the CIGS absorber film produced by different deposition schemes is studied and analyzed.The experimental results show that the Dep-2 sputtering process scheme is used sequentially on the side of the fiber substrate.The content of Cu/(In+Ga)and Ga/(Ga+In)in the absorber film produced by sputtering copper indium gallium selenide,indium selenide and copper gallium selenide sputtering sources is close to the optimal value.The film-forming surface is dense and smooth,and its optical properties tend to be in the infrared wavelength range,which is sufficient to prepare CIGS thin-film batteries with internal light structure on the side of the fiber substrate.The thin-film crystals mainly grow along the direction of the(112)crystal plane to form crystallinity and single The chalcopyrite phase structure film with good phase properties.(4)Based on the fiber substrate,the crystal structure and photoelectric properties of the ITO transparent conductive layer film prepared by DC sputtering ITO single target source deposition under different deposition conditions such as sputtering power,sputtering temperature,and sputtering pressure are studied.The experimental results show that the change of sputtering temperature has a greater impact on the structure and photoelectric properties of the ITO transparent conductive layer,while the sputtering power and sputtering pressure have little impact on the structure and photoelectric properties of the ITO transparent conductive layer.The experiment sequentially optimizes the sputtering Power,sputtering temperature and sputtering pressure are used to determine the best preparation process parameters.When the sputtering power is 85W,the sputtering temperature is 350?,and the sputtering pressure is 0.7 Pa,ITO is made transparent on the side of the fiber substrate.The conductive electrode film has the best crystal structure and photoelectric properties.The film thickness is 186 nm,and the surface is smooth and grows in a(400)crystal direction.The minimum resistivity of the film obtained is 2.5×10-4?·cm,and the light transmittance is About 75%. |
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