Controlled-growth And Characterization Of The ?-Ga₂O₃ Nano/micro Structures

The?-Ga₂O₃ is an n-type direct wide band gap semiconductor materials and wide bandgap of 4.9 eV with good chemical and thermal stability.It is a promising candidate for application in UV transparent electrodes,solar-blind photodetectors,gas sensors and flat-panel displays.In order to realize?-Ga2O3 based nano/micro-optoelectronic devices,it is necessary to obtain controlled-synthesis and the high quality?-Ga2O3 nano/micro materials.According to the present difficulties on synthesizing?-Ga2O3 nano/micro materials,in this paper,according to the present research difficulties on?-Ga2O3 nano/micro materials,the surface morphology,structural,optical properties and growth mechanism of high density and large quantity?-Ga2O3 microbelts on patterned sapphire substrates?PSS?by CVD and?-Ga2O3 nanowires with net-like structure by electric field assisted chemical vapor deposition method were investigated.The major research achievements are listed below:?1?The high density and large quantity?-Ga₂O₃ microbelts by changing the growth temperature were synthesized on PSS by CVD equipment.The width of the microbelts was about 1-1.5?m,and the length was about 2-10?m.Different growth temperature influenced for surface morphology and crystal structure of?-Ga₂O_3.Results were indicated that the optimal growth temperature of?-Ga₂O₃ microbelts was at 900?.Furthermore,also the growth mechanism of microbelts was studied,and found the hemispherical PSS for?-Ga₂O₃ microbelts formation played an important role.The optical absorption spectrum indicated that optical band gap energy of microbelts was 4.78 eV.?2??-Ga₂O₃ nanowires with net-like structure were prepared on sapphire substrates via electric field assisted CVD.Different growth temperatures influenced for surface morphology,crystal structure and optical properties of?-Ga₂O₃ were researched.These results were showed the external electric voltage obviously influenced by the surface morphology of samples.When have external electric field,the?-Ga₂O₃ nanowires with better orientation and net-like structures were prepared,which composed of different growth directions of three groups.The distribution and length of the nanowires were obviously changes density and longer with increasing external electric voltage.Moreover,also found that the electric field assisted CVD method can obviously improve crystal quality of samples.