Synthesis Of GaN Nanowires And Research In The Field Of Nanogenerators

Gallium nitride (GaN) nano-materials is one of semiconductors representatives which has wide band gap, the excellent characteristics of high thermal conductivity, stable chemical properties, the larger saturated electron drift velocity etc. These excellent features make the GaN nano-materials be widely used in high-brightness LEDs, blue lasers, UV detectors, high-power heat device. In addition, the blue shift due to the non-polar GaN material can eliminate piezoelectric polarization nitride light-emitting device of radiative recombination efficiency an demission wavelengths. Preparation of non-polar GaN, GaN-based materials has become a new research focus. On a silicon (Si) and sapphire (Al2O3) substrate by chemical vapor deposite (CVD), and to study the growth of GaN nanowires has made some progress. The study was carried out for our next research such as:the GaN nano-generator as well as semiconductor devices and lay a solid experimental.Fistly, we may obtain GaN nanowires on a silicon (Si) and sapphire (Al2O3) substrates by adjusting the growth temperature via CVD method. The study found Al2O3substrate is easy growth of GaN, which is better lattice matching.Secondly, we test GaN nanowires prepared by X-ray diffraction (XRD), Field emission scanning electron microscopy (FESEM) and photoluminescence (PL) spectra. We found:the highest quality and the growth length increasing temperature was1000℃. Thirdly, GaN nano-materials can be applied to the nano-generator. The electromagnetic radiation signal generator distance directly affect the current siganal of the close of electromagnetic signals can produce strong radiation current signals. Cu-GaN generator can produce stronger current signal than other matal-GaN generators.