Research On Resistance Switching Properties In ?-Fe₂O₃ Thin Films

With the development of society,human has entered an information explosion era,so people have reached unprecedented high level of high-tech products.However,expensive prices and not outstanding performance make the vast majority of us can only look at these high performance products.A large part of the reason is that the materials of these products are rare materials in nature and are not very stable.Therefore,we urgently need to Find the low cost,superior performance materials.Looking at some of the material around us,can very good to meet the low price,stable and obvious performance of the material is not much,and the ?-Fe2O3 is one of them.So,from this perspective,it is really the best choice of the manufacturing materials of these high-tech products.So,if the?-Fe2O3 can meet the requirements,we must also study the performance,so this paper is mainly to study the resistance switch characteristics of ? thin films.The main contents are as follows:(1)briefly describes the characteristics of magnetic materials,some properties of ?-Fe2O3 advantages and application prospects.(2)brief introduction of various preparation methods of nanometer thin films,including magnetron sputtering,sol-gel,molecular beam epitaxy Pulse,pulsed laser deposition and characterization methods of some films,such as the characterization of film thickness,characterization of surface morphology,characterization of film composition,characterization of film structure,etc.(3)the sample of Pt / ?-Fe2O3 / Ag film was grown by magnetron sputtering,and ?-Fe2O3 thin films were grown on the Pt substrate by RF sputtering method.The ?-Fe2O3 films were annealed in vacuum,and the annealing temperature was 200 ?,400 ?,600 ?,and 750 ?,respectively.the samples were annealed at different annealing temperatures.(4)the Object image films were detected by X-ray diffraction(XRD)and 400 ?annealing treatment of ? films.The results show that the purity of ? film annealed at 400 ? is high,almost no other impurities such as nitrogen dioxide,ferrous oxide,Alpha and Deng.(5)the current(I-V)curves of ?-Fe2O3 films annealed at 200 ?,400 ?,600 ?,and 750 ? at different annealing temperatures are tested by instrument photodiode.The results show that the current-voltage(I-V)curves of thin film devices vary greatly at different annealing temperatures.(6)we chose the samples annealed at 400 ? for wake up with a start.I-V curve shows that our film samples show the rectification effect,which is due to the short barrier formed between the film sample and ag electrode.In addition,our films are also very stable.(7)the current-voltage(I-V)curves of?-Fe2O3 films were tested under different illumination intensity.the results show that light has significant effect on the currentvoltage(I-V)curves of Pt / ?-Fe2O3/ Ag thin films.