Design Of Electronic Ballast For High Pressure Sodium Lamp Based On SiC Devices

With the development of society and economy,the problem of energy shortage and environmental pollution has been paid more and more attention.People have a further pursuit of green lighting.High intensity gas discharge lamp as the third generation light source,has the advantages of high efficiency,long life and good color,which is widely applied to the complex traffic environment lighting and industrial lighting systems.As a new type of semiconductor devices,silicon carbide(SiC)MOSFET has the advantages of high voltage resistance,low on resistance,good thermal stability,high switching frequency and low loss.It can be used in the electronic ballast circuit,which can improve the power density and efficiency of the system,and has high reliability,so as to save energy,improve the lighting environment,and promote the continuous development of the lighting system.This paper introduces the development of power device application technology and the development of electric light source technology.Based on the analysis of the characteristics of the gas discharge lamp,the relevant theoretical knowledge of the design of the electronic ballast for high pressure sodium lamp is described.After analyzing the related theoretical knowledge,electromagnetic filter circuit,interleaved parallel power factor correction(PFC)circuit,inverter circuit are designed,and the parameters of each part of the circuit are calculated.At the same time,in order to apply the SiC MOS tube to the circuit of the electronic ballast,a suitable driving circuit is designed;The junction temperature of SiC and Si two kinds of materials under the high frequency MOS is compared and analyzed.The results show that the SiC MOS tube has a great advantage over the Si MOS tube in high temperature resistance,high frequency and low loss.In order to realize the application of the SiC MOS tube and SiC diode in the electronic ballast,on the other hand,in order to compare the SiC MOS tube with the Si MOS tube,the circuit is designed.AC power through interleaved BCM Boost PFC UCC28061 chip control circuit,DC output voltage of 400 V,and then through the inverter bridge circuit output high frequency alternating current with pulse start mode,and solves the problem of acoustic resonance.Finally,the circuit was fabricated and tested,and the application of SiC MOS tube and SiC diode was achieved.